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1

Modeling of Stochastic Temperature and Heat Stress Directly Underneath Agrivoltaic Conditions with Orthosiphon Stamineus Crop Cultivation

Othman, Noor Fadzlinda, Yaacob, Mohammad Effendy, Mat Su, Ahmad Suhaizi, Jaafar, Juju Nakasha, Hizam, Hashim, Shahidan, Mohd Fairuz, Jamaluddin, Ahmad Hakiim, Chen, Guangnan, Jalaludin, Adam

Journal:

Year:

2020

File:

PDF, 4.46 MB

2020

2

Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs

Takahashi, T., Sato, M., Nakasha, Y., Hirose, T., Hara, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 647 KB

english, 2012

3

Highly uniform InAlAs-InGaAs HEMT technology for high-speed optical communication system ICs

Hara, N., Makiyama, K., Takahashi, T., Sawada, K., Arai, T., Ohki, T., Nihei, M., Suzuki, T., Nakasha, Y., Nishi, M.

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2003

Language:

english

File:

PDF, 846 KB

english, 2003

4

[IEEE 2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA (2006.06.11-2006.06.16)] 2006 IEEE MTT-S International Microwave Symposium Digest - An RF Chipset for Impulse Radio UWB Using 0.13 μm InP-HEMT Technology

Kawano, Yoichi, Nakasha, Yasuhiro, Yokoo, Kaoru, Masuda, Satoshi, Takahashi, Tsuyoshi, Hirose, Tatsuya, Oishi, Yasuyuki, Hamaguchi, Kiyoshi

Year:

2006

Language:

english

File:

PDF, 3.80 MB

english, 2006

5

[IEEE 2008 IEEE MTT-S International Microwave Symposium Digest - MTT 2008 - Atlanta, GA, USA (2008.06.15-2008.06.20)] 2008 IEEE MTT-S International Microwave Symposium Digest - A W-band wavelet generator using 0.13-μm InP HEMTs for multi-gigabit communications based on ultra-wideband impulse radio

Nakasha, Y., Kawano, Y., Suzuki, T., Ohki, T., Takahashi, T., Makiyama, K., Hirose, T., Hara, N.

Year:

2008

Language:

english

File:

PDF, 4.68 MB

english, 2008

6

[IEEE 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014 - Tampa, FL, USA (2014.6.1-2014.6.6)] 2014 IEEE MTT-S International Microwave Symposium (IMS2014) - Flip chip assembly for sub-millimeter wave amplifier MMIC on polyimide substrate

Kawano, Yoichi, Matsumura, Hiroshi, Shiba, Shoichi, Sato, Masaru, Suzuki, Toshihide, Nakasha, Yasuhiro, Takahashi, Tsuyoshi, Makiyama, Kozo, Hara, Naoki

Year:

2014

Language:

english

File:

PDF, 1.36 MB

english, 2014

7

[IEEE 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier Cedex, France (2014.5.11-2014.5.15)] 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Zero-bias GaAsSb/InAlAs/InGaAs tunnel diode detectors for 220–330 GHz range

Patrashin, Mikhail, Sekine, Norihiko, Kasamatsu, Akifumi, Watanabe, Issei, Hosako, Iwao, Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki

Year:

2014

Language:

english

File:

PDF, 585 KB

english, 2014

8

[IEEE 2008 Asia Pacific Microwave Conference - Macau (2008.12.16-2008.12.20)] 2008 Asia-Pacific Microwave Conference - 20-GHz, 20-dBm pseudo-differential power amplifier in standard 90-nm CMOS

Kawano, Y., Suzuki, T., Sato, M., Nakasha, Y., Hirose, T., Hara, N., Joshin, K.

Year:

2008

Language:

english

File:

PDF, 141 KB

english, 2008

9

Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication

Nakasha, Yasuhiro, Kawano, Yoichi, Suzuki, Toshihide, Ohki, Toshihiro, Takahashi, Tsuyoshi, Makiyama, Kozo, Hara, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 630 KB

english, 2010

10

[IEEE 2014 IEEE International Microwave and RF Conference (IMaRC) - Bangalore, India (2014.12.15-2014.12.17)] 2014 IEEE International Microwave and RF Conference (IMaRC) - An F-band mixer module with a built-in broadband IF amplifier for spectrum analysis with low intermodulation distortion

Shiba, Shoichi, Sato, Masaru, Matsumura, Hiroshi, Kawano, Yoichi, Takahashi, Tsuyoshi, Suzuki, Toshihide, Nakasha, Yasuhiro, Iwai, Taisuke, Hara, Naoki

Year:

2014

Language:

english

File:

PDF, 398 KB

english, 2014

11

[IEEE 2016 IEEE/MTT-S International Microwave Symposium (IMS) - San Francisco, CA (2016.5.22-2016.5.27)] 2016 IEEE MTT-S International Microwave Symposium (IMS) - Demonstration of 20-Gbps wireless data transmission at 300 GHz for KIOSK instant data downloading applications with InP MMICs

Song, Ho-Jin, Kosugi, Toshihiko, Hamada, Hiroshi, Tajima, Takuro, El Moutaouakil, Amine, Matsuzaki, Hideaki, Kawano, Yoichi, Takahashi, Tsuyoshi, Nakasha, Yasuhiro, Hara, Naoki, Fujii, Katsumi, Watana

Year:

2016

Language:

english

File:

PDF, 712 KB

english, 2016

12

[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - A Demultiplexer Immune from Fabrication-Error Impairments as an Enabler of Compact High-Channel-Count (> 64 ch) Dense WDM Systems on Low-End Si PIC Platforms

Akiyama, Tomoyuki, Oda, Shoichiro, Jeong, Seok-Hwan, Nakasha, Yasuhiro, Tanaka, Yu, Hoshida, Takeshi

Year:

2019

Language:

english

File:

PDF, 3.89 MB

english, 2019

13

High-power GaN-HEMT with low current collapse for millimeter-wave amplifier

Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi, Naoki Hara, Shiro Ozaki, Norikazu Nakamura, Toshihide Kikkawa

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 268 KB

english, 2011

14

42% high-efficiency two-stage HBT power-amplifier MMIC for W-CDMA cellular phone systems

Iwai, T., Kebayashi, K., Nakasha, Y., Miyashita, T., Ohara, S., Joshin, K.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2000

Language:

english

File:

PDF, 135 KB

english, 2000

15

A 50-Gbit/s 450-mW Full-Rate 4:1 Multiplexer With Multiphase Clock Architecture in 0.13- InP HEMT Technology

Suzuki, T., Kawano, Y., Nakasha, Y., Yamaura, S., Takahashi, T., Makiyama, K., Hirose, T.

Journal:

IEEE Journal of Solid-State Circuits

Year:

2007

Language:

english

File:

PDF, 1.77 MB

english, 2007

16

[IEEE 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011 - Baltimore, MD, USA (2011.06.5-2011.06.10)] 2011 IEEE MTT-S International Microwave Symposium - C-Ku band GaN MMIC T/R frontend module using multilayer ceramics technology

Masuda, Satoshi, Yamada, Masao, Ohki, Toshihiro, Makiyama, Kozo, Okamoto, Naoya, Nakasha, Yasuhiro, Imanishi, Kenji, Kikkawa, Toshihide, Shigematsu, Hisao

Year:

2011

Language:

english

File:

PDF, 487 KB

english, 2011

17

[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Improvement in noise figure of wide-gate-head InP-based HEMTs with cavity structure

Takahashi, T., Sato, M., Nakasha, Y., Hirose, T., Hara, N.

Year:

2010

Language:

english

File:

PDF, 66 KB

english, 2010

18

A 9.6-Gb/s HEMT ATM switch LSI with event-controlled FIFO

Watanabe, Y., Nakasha, Y., Kato, Y., Odani, K., Abe, M.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1993

Language:

english

File:

PDF, 764 KB

english, 1993

19

A 43-Gb/s full-rate-clock 4:1 multiplexer in InP-based HEMT technology

Nakasha, Y., Suzuki, T., Kano, H., Tsukashima, K., Ohya, A., Sawada, K., Makiyama, K., Takahashi, T., Nishi, M., Hirose, T., Takikawa, M., Watanabe, Y.

Journal:

IEEE Journal of Solid-State Circuits

Year:

2002

Language:

english

File:

PDF, 968 KB

english, 2002

20

Noise Figure Improvement in InP-Based HEMTs Using Wide Gate Head and Cavity Structure

Takahashi, T., Sato, M., Nakasha, Y., Hirose, T., Hara, N.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 345 KB

english, 2012

21

Effective hemostasis with hypertonic saline-epinephrine solution for uncontrolled bleeding during endoscopic submucosal dissection of the stomach

Matsui, Noriaki, Sugi, Makiko, Bai, Xiaopeng, Nakasha, Akio, Kuwano, Akifumi, Shimokawa, Yuuzou, Tada, Seiya, Oogoshi, Keiichirou, Tanaka, Munehiro, Nakamura, Kazuhiko

Journal:

Digestive Endoscopy

Year:

2012

Language:

english

File:

PDF, 473 KB

english, 2012

22

[IEEE 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Monterey, CA, USA (2010.10.3-2010.10.6)] 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - E-Band 85-mW Oscillator and 1.3-W Amplifier ICs Using 0.12µm GaN HEMTs for Millimeter-Wave Transceivers

Nakasha, Yasuhiro, Masuda, Satoshi, Makiyama, Kozo, Ohki, Toshihiro, Kanamura, Masahito, Okamoto, Naoya, Tajima, Tatsuhiko, Seino, Takehiro, Shigematsu, Hisao, Imanishi, Kenji, Kikkawa, Toshihide, Jos

Year:

2010

Language:

english

File:

PDF, 506 KB

english, 2010

23

[IEEE 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) - Austin, TX, USA (2013.01.20-2013.01.20)] 2013 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications - Submillimeter-wave InP HEMT amplifiers with current-reuse topology

Sato, Masaru, Shiba, Shoichi, Matsumura, Hiroshi, Takahashi, Tsuyoshi, Suzuki, Toshihide, Nakasha, Yasuhiro, Hara, Naoki

Year:

2013

Language:

english

File:

PDF, 302 KB

english, 2013

24

[IEEE 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Monterey, CA, USA (2013.10.13-2013.10.16)] 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - 230-240 GHz, 30 dB Gain Amplifier in INP-HEMT for Multi-10 Gb/s Data Communication Systems

Kawano, Yoichi, Matsumura, Hiroshi, Shiba, Shoichi, Sato, Masaru, Suzuki, Toshihide, Nakasha, Yasuhiro, Takahashi, Tsuyoshi, Makiyama, Kozo, Hara, Naoki

Year:

2013

Language:

english

File:

PDF, 668 KB

english, 2013

25

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - F-Band Bidirectional Amplifier Using 75-nm InP HEMTs

Shiba, Shoichi, Sato, Masaru, Suzuki, Toshihide, Nakasha, Yasuhiro, Takahashi, Tsuyoshi, Makiyama, Kozo, Hara, Naoki

Year:

2012

Language:

english

File:

PDF, 709 KB

english, 2012

26

[IEEE 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM) - Santa Barbara, CA, USA (2012.08.27-2012.08.30)] 2012 International Conference on Indium Phosphide and Related Materials - Lattice-matched p+-GaAsSb/i-InAlAs/n-InGaAs zero-bias backward diodes for millimeter-wave detectors and mixers

Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki

Year:

2012

Language:

english

File:

PDF, 586 KB

english, 2012

27

[IEEE 2013 25th International Conference on Indium Phosphide and Related Materials (IPRM) - Kobe, Japan (2013.05.19-2013.05.23)] 2013 International Conference on Indium Phosphide and Related Materials (IPRM) - Improvement in nonlinear characteristics of zero bias GaAsSb-based backward diodes

Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki

Year:

2013

Language:

english

File:

PDF, 501 KB

english, 2013

28

[IEEE 2013 25th International Conference on Indium Phosphide and Related Materials (IPRM) - Kobe, Japan (2013.05.19-2013.05.23)] 2013 International Conference on Indium Phosphide and Related Materials (IPRM) - 250–290 GHz amplifier in 75-nm InP HEMT technology using inverted microstrip transmission line

Matsumura, Hiroshi, Shiba, Shoichi, Sato, Masaru, Takahashi, Tsuyoshi, Suzuki, Toshihide, Nakasha, Yasuhiro, Hara, Naoki

Year:

2013

Language:

english

File:

PDF, 535 KB

english, 2013

29

[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - A 3.6 GHz dual modulus prescaler IC using optimal pseudomorphic HEMT structure on Si substrates

Suehiro, H., Ohori, T., Nakasha, Y., Miyata, T., Watanabe, Y., Kuroda, S., Takikawa, M.

Year:

1994

Language:

english

File:

PDF, 406 KB

english, 1994

30

[IEEE 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier Cedex, France (2014.5.11-2014.5.15)] 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Highly sensitive planar-doped GaAsSb-based backward diodes at 170 GHz

Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Shiba, Shoichi, Hara, Naoki

Year:

2014

Language:

english

File:

PDF, 259 KB

english, 2014

31

93–133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology

Sato, Masaru, Shiba, Shoichi, Matsumura, Hiroshi, Takahashi, Tsuyoshi, Nakasha, Yasuhiro, Suzuki, Toshihide, Hara, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.06 MB

english, 2013

32

$W$-band Transmitter and Receiver for 10-Gb/s Impulse Radio With an Optical-Fiber Interface

Nakasha, Y., Sato, M., Tajima, T., Kawano, Y., Suzuki, T., Takahashi, T., Makiyama, K., Ohki, T., Hara, N.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2009

Language:

english

File:

PDF, 2.09 MB

english, 2009

33

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988 - Atlanta, GA, USA (1-4 Nov. 1998)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) - Current path optimized structure for high drain current density and high gate-turn-on voltage enhancement mode heterostructure field effect transistors

Hara, N., Nakasha, Y., Nagahara, M., Joshin, K., Watanabe, Y., Takikawa, M.

Year:

1998

Language:

english

File:

PDF, 305 KB

english, 1998

34

[IEEE IEEE Compound Semiconductor Integrated Circuit Symposium. 2004 IEEE CISC Symposium - Monterey, CA, USA (24-27 Oct. 2004)] 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) - Design and InP HEMT Technology for ultra-high speed digital ICs with beyond 80-Gbit/s operation

Suzuki, T., Kawano, Y., Nakasha, Y., Takahashi, T., Makiyama, K., Hirose, T., Takikawa, M.

Year:

2004

Language:

english

File:

PDF, 292 KB

english, 2004

35

[IEEE GaAs IC Symposium Technical Digest 1992 - Miami Beach, FL, USA (4-7 Oct. 1992)] GaAs IC Symposium Technical Digest 1992 - A 9.6 Gb/s HEMT ATM switch LSI for B-ISDN

Watanabe, Y., Nakasha, Y., Kato, Y., Odani, K., Abe, M.

Year:

1992

Language:

english

File:

PDF, 367 KB

english, 1992

36

[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation

Hara, N., Nakasha, Y., Kikkawa, T., Takahashi, H., Joshin, K., Watanabe, Y., Tanaka, H., Takikawa, M.

Year:

1998

Language:

english

File:

PDF, 296 KB

english, 1998

37

[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - A low-distortion and high-efficiency E-mode GaAs power FET based on a new method to improve device linearity focused on g/sub m/ value

Nakasha, Y., Nagahara, M., Tateno, Y., Takahashi, H., Igarashi, T., Joshin, K., Fukaya, J., Takikawa, M.

Year:

1999

Language:

english

File:

PDF, 356 KB

english, 1999

38

[IEEE 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2012) - Wollongong, NSW, Australia (2012.09.23-2012.09.28)] 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves - High frequency performance of GaAsSb/InAlAs/InGaAs tunnel diodes at 220 GHz

Patrashin, M., Sekine, N., Kasamatsu, A., Watanabe, I., Hosako, I., Takahashi, T., Sato, M., Nakasha, Y., Hara, N.

Year:

2012

Language:

english

File:

PDF, 563 KB

english, 2012

39

[IEEE 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers - Forth Worth, TX, USA (6-8 June 2004)] 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers - An 80 Gbit/s 1:2 demultiplexer in InP-based HEMT technology

Nakasha, Y., Suzuki, T., Kano, H., Kawano, Y., Takahashi, T., Makiyama, K., Hirose, T., Takikawa, A.

Year:

2004

Language:

english

File:

PDF, 269 KB

english, 2004

40

[IEEE IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - Palm Springs, CA, USA (2005.11.2-2005.11.2)] IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - A novel 50-Gbit/s NRZ-RZ converter with retiming function using InP HEMT technology

Suzuki, T., Kawano, Y., Nakasha, Y., Takahashi, T., Makiyama, K., Hirose, T.

Year:

2005

Language:

english

File:

PDF, 661 KB

english, 2005

41

[IEEE 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) - San Francisco, CA, USA (Feb 3-7, 2002)] 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) - A 90Gb/s 2:1 multiplexer IC in InP-based HEMT technology

Suzuki, T., Nakasha, Y., Takahashi, T., Makiyama, K., Imanishi, K., Hirose, T., Watanabe, Y.

Year:

2002

Language:

english

File:

PDF, 413 KB

english, 2002

42

[IEEE 2009 IEEE MTT-S International Microwave Symposium Digest (MTT) - Boston, MA, USA (2009.06.7-2009.06.12)] 2009 IEEE MTT-S International Microwave Symposium Digest - W-band transmitter and receiver modules for 10-Gb/s impulse radio

Nakasha, Y., Sato, M., Tajima, T., Kawano, Y., Suzuki, T., Takahashi, T., Makiyama, K., Ohki, T., Hara, N.

Year:

2009

Language:

english

File:

PDF, 289 KB

english, 2009

43

[IEEE 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Phoenix, AZ, USA (20-22 May 2001)] 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173) - 40-Gbit/s D-type flip-flop and multiplexer circuits using InP HEMT

Suzuki, T., Kano, H., Nakasha, Y., Takahashi, T., Imanishi, K., Ohnishi, H., Watanabe, Y.

Year:

2001

Language:

english

File:

PDF, 303 KB

english, 2001

44

[IEEE 2008 IEEE Compound Semiconductor Integrated Circuits Symposium (CSICS) - Monterey, CA, USA (2008.10.12-2008.10.15)] 2008 IEEE Compound Semiconductor Integrated Circuits Symposium - A 12.5-Gb/s Pulse Modulator with 6.5-ps FWHM Using 0.1-μm InP HEMTs for Ultra-Wideband Impulse Radio Communications

Nakasha, Yasuhiro, Kawano, Yoichi, Suzuki, Toshihide, Ohki, T., Takahashi, Tsuyoshi, Makiyama, K., Hirose, Tatsuya, Hara, N.

Year:

2008

Language:

english

File:

PDF, 1.13 MB

english, 2008

45

[IEEE 2013 IEEE Topical Conference on Biomedical Wireless Technologies, Networks, and Sensing Systems (BioWireleSS) - Austin, TX, USA (2013.01.20-2013.01.23)] 2013 IEEE Topical Conference on Biomedical Wireless Technologies, Networks, and Sensing Systems - Submillimeter-wave InP HEMT amplifiers with current-reuse topology

Sato, Masaru, Shiba, Shoichi, Matsumura, Hiroshi, Takahashi, Tsuyoshi, Suzuki, Toshihide, Nakasha, Yasuhiro, Hara, Naoki

Year:

2013

Language:

english

File:

PDF, 303 KB

english, 2013

46

[IEEE 2013 IEEE Radio and Wireless Symposium (RWS) - Austin, TX, USA (2013.01.20-2013.01.23)] 2013 IEEE Radio and Wireless Symposium - Submillimeter-wave InP HEMT amplifiers with current-reuse topology

Sato, Masaru, Shiba, Shoichi, Matsumura, Hiroshi, Takahashi, Tsuyoshi, Suzuki, Toshihide, Nakasha, Yasuhiro, Hara, Naoki

Year:

2013

Language:

english

File:

PDF, 298 KB

english, 2013

47

[IEEE 2007 Korea-Japan Microwave Conference - Naha, Okinawa, Japan (2007.11.15-2007.11.16)] 2007 Korea-Japan Microwave Conference - A 25-GHz, 40-mW Fully-Integrated Power Amplifier in Standard 90-nm Si-CMOS Technology

Kawano, Yoichi, Suzuki, Toshihide, Nakasha, Yasuhiro, Hirose, Tatsuya, Joshin, Kazukiyo

Year:

2007

Language:

english

File:

PDF, 3.18 MB

english, 2007

48

[IEEE IEEE Custom Integrated Circuits Conference - CICC '94 - San Diego, CA, USA (1-4 May 1994)] Proceedings of IEEE Custom Integrated Circuits Conference - CICC '94 - A 0.7-mW/2-GHz dual modulus prescaler IC

Nakasha, Y., Miyata, T., Watanabe, Y., Ochimizu, H., Kuroda, S., Takikawa, M.

Year:

1994

Language:

english

File:

PDF, 314 KB

english, 1994

49

RF Chipset for Impulse UWB Radar Using 0.13-$\mu{\hbox {m}}$ InP-HEMT Technology

Kawano, Yoichi, Nakasha, Yasuhiro, Yokoo, Kaoru, Masuda, Satoshi, Takahashi, Tsuyoshi, Hirose, Tatsuya, Oishi, Yasuyuki, Hamaguchi, Kiyoshi

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2006

Language:

english

File:

PDF, 2.79 MB

english, 2006

50

[IEEE Proceedings of the 3rd European Radar Conference - Manchester (2006.09.13-2006.09.15)] 2006 European Radar Conference - Sub-10 ps Pulse Generator with Biphase Modulation Function in 0.13-μm InP HEMT

Kawano, Y., Nakasha, Y., Suzuki, T., Ohki, T., Takahashi, T., Makiyama, K., Hirose, T., Joshin, K.

Year:

2006

Language:

english

File:

PDF, 613 KB

english, 2006